... VCO-MMIC^0.1

Voltage Controlled Oscillator Monolithic Microwave Integrated Circuit.

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... valleys^2.1

In this context, the zinc-blende structure of GaN will be considered. For a detailed description of GaN band structures, see section 3.1.2.

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... mass^2.2

For GaAs, electrons in L- valley have an effective mass of $0.4\thickspace m_0$ and in $\Gamma$-valley of $0.068 \thickspace m_0$ [Hob74].

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... conserved^2.3

Considering $\frac{\partial( j_{drift}+j_{diff})}{\partial x}=-\frac{\partial \rho}{\parti... ...epsilon_r \frac{\partial}{ \partial t} \frac{\partial\mathcal{E}}{\partial x}$ $\Rightarrow$ $\frac{\partial j}{\partial x}$ of (2.10) is 0 and the current is conserved.

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... resistance^2.4

$R_s$ is a resistance per unit area [ $\Omega/cm^2$]

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... reached^2.5

Think of 140 electric irons on a T-shirt of one $cm^2$.

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... conduction^2.6

Only the stationary solution are considered ( $\partial T / \partial t = 0$). The convection and the irradiation flow are not relevant for the Gunn device.

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... conductivity^2.7

Further on $\lambda$ is assumed as a scalar value (isotropic condition), constant with temperature and pressure.

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... (Siemens)^3.1

Goryunova described III-V materials as semiconductors for the first time in 1950. In her Ph.D. thesis, completed in 1951 at Leningrad State University, she indicated that III-V zinc-blend compounds are semiconductors. Due to the Cold War, her work was published outside the U.S.S.R. much later.

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... RHEED^3.2

RHEED: Reflection High Energy Electron Diffraction

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... potential^4.1

From Eq. (4.18), if $V=V_{bi}$ ideally $1/C^2=0$

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... LRRM^4.2

Line Reflect Reflect Match: it requires calibration standards kits with loads, shorts and through

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... Chart^4.3

The Smith Chart was developed by Phillip H. Smith in 1937 to ease his RF design work in Bell Labs.

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... lossless^4.4

Most transmission lines have losses low enough for this assumption to hold.

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...#tex2html_wrap_inline17060#
^4.5

The Smith Chart relies on normalized impedances.

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... mesa^5.1

The area of the mesa is proportionally related to the diode maximum current. The inaccuracy in defining the diode mesa prevents the fulfilment of the design specification.

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... evaporated^5.2

It has been noticed that 10 seconds in situ sputtering before the metal evaporation improves further the contact quality.

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... Au/Ti^5.3

Before plating the Ti layer is removed with HF.

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... 2ppm^6.1

Maximum failure rate per year in part per million.

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... oscillators^6.2

A variable frequency oscillator, whose frequency is varied by means of an applied control voltage, is called voltage-controlled-oscillator (VCO)

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... pushing^6.3

Frequency pushing is a measure of the sensitivity of the VCO output frequency to supply voltage, usually expressed in [MHz/V].

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... VCO-MMIC^7.1

Voltage Controlled Oscillator Monolithic Microwave Integrated Circuit.

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