Next:
List of Figures
Up:
Fabrication and characterization of
Previous:
B. Properties of semiconductors
Contents
Subsections
C.
1
Cleaning process
C.
1
.
0
.
1
Cleaning before photo-lithography
C.
1
.
0
.
2
Cleaning before metallization: deoxidation of GaAs
C.
1
.
0
.
3
Plasma cleaning after photo-lithography
C.
1
.
0
.
4
Resist removal after etch process
C.
1
.
0
.
5
ECR-Chamber cleaning before plasma-etch
C.
2
Lithography processes
C.
2
.
0
.
1
Edge removal - lacquering AZ 5214
C.
2
.
0
.
2
Positive process - lacquering AZ 5214
C.
2
.
0
.
3
Positive process - lacquering AZ 4564, resist layer for plating air-bridges
C.
2
.
0
.
4
Image-reversal process - lacquering AZ 5214, simple resist layer
C.
2
.
0
.
5
Negative process - lacquering PMMA for E-Beam lithography
C.
2
.
0
.
6
Image-reversal process - lacquering AZ 5214, double resist layer
C.
2
.
0
.
7
Negative process - lacquering Polyamide (Durimide 7510)
C.
3
Wet-chemical etching processes
C.
3
.
0
.
1
GaAs etching with sulfuric acid for substrate removal
C.
3
.
0
.
2
GaAs etching with sulfuric acid for mesa isolation
C.
3
.
0
.
3
Selective Etching of GaAs over
C.
3
.
0
.
4
Selective Etching of
over GaAs
C.
3
.
0
.
5
Etching process for nickel removal
C.
3
.
0
.
6
Etching process for titan removal
C.
4
Plasma-etching processes
C.
4
.
0
.
1
ECR-RIE process for GaAs, AlGaAs mesas
C.
4
.
0
.
2
ECR-RIE process for GaN mesas
C.
4
.
0
.
3
ECR-RIE process for GaN nanocolumns
C.
4
.
0
.
4
RIE process for Polyimide (Durimide 7510)
C.
5
Metallization processes
C.
5
.
0
.
1
Ohmic contacts (for GaAs)
C.
5
.
0
.
2
Ohmic contacts (for GaN)
C.
5
.
0
.
3
Bond pads
C.
5
.
0
.
4
Bond pads for polyamide process
C.
5
.
0
.
5
Air-bridge seed layer
C.
5
.
0
.
6
Lift-Off process
C.
5
.
0
.
7
Annealing of Ge/Ni/Au metallization in RTP oven
C.
5
.
0
.
8
Annealing of Ti/Al/Ni/Au metallization in RTP oven
C.
5
.
0
.
9
Gold galvanic plating
C. Process parameters
C.
1
Cleaning process
C.
1
.
0
.
1
Cleaning before photo-lithography
C.
1
.
0
.
2
Cleaning before metallization: deoxidation of GaAs
C.
1
.
0
.
3
Plasma cleaning after photo-lithography
C.
1
.
0
.
4
Resist removal after etch process
C.
1
.
0
.
5
ECR-Chamber cleaning before plasma-etch
C.
2
Lithography processes
C.
2
.
0
.
1
Edge removal - lacquering AZ 5214
C.
2
.
0
.
2
Positive process - lacquering AZ 5214
C.
2
.
0
.
3
Positive process - lacquering AZ 4564, resist layer for plating air-bridges
C.
2
.
0
.
4
Image-reversal process - lacquering AZ 5214, simple resist layer
C.
2
.
0
.
5
Negative process - lacquering PMMA for E-Beam lithography
C.
2
.
0
.
6
Image-reversal process - lacquering AZ 5214, double resist layer
C.
2
.
0
.
7
Negative process - lacquering Polyamide (Durimide 7510)
C.
3
Wet-chemical etching processes
C.
3
.
0
.
1
GaAs etching with sulfuric acid for substrate removal
C.
3
.
0
.
2
GaAs etching with sulfuric acid for mesa isolation
C.
3
.
0
.
3
Selective Etching of GaAs over
C.
3
.
0
.
4
Selective Etching of
over GaAs
C.
3
.
0
.
5
Etching process for nickel removal
C.
3
.
0
.
6
Etching process for titan removal
C.
4
Plasma-etching processes
C.
4
.
0
.
1
ECR-RIE process for GaAs, AlGaAs mesas
C.
4
.
0
.
2
ECR-RIE process for GaN mesas
C.
4
.
0
.
3
ECR-RIE process for GaN nanocolumns
C.
4
.
0
.
4
RIE process for Polyimide (Durimide 7510)
C.
5
Metallization processes
C.
5
.
0
.
1
Ohmic contacts (for GaAs)
C.
5
.
0
.
2
Ohmic contacts (for GaN)
C.
5
.
0
.
3
Bond pads
C.
5
.
0
.
4
Bond pads for polyamide process
C.
5
.
0
.
5
Air-bridge seed layer
C.
5
.
0
.
6
Lift-Off process
C.
5
.
0
.
7
Annealing of Ge/Ni/Au metallization in RTP oven
C.
5
.
0
.
8
Annealing of Ti/Al/Ni/Au metallization in RTP oven
C.
5
.
0
.
9
Gold galvanic plating
Next:
List of Figures
Up:
Fabrication and characterization of
Previous:
B. Properties of semiconductors
Contents
simone montanari 2005-08-02