B. Properties of semiconductors and table of elements

Table B.1: Properties of semiconductors at room temperature.

Properties	Ge	Si	GaAs	ALAs	GaN	AlN
crystal structure	diamond	diamond	zinc-blende	zinc-blende	zinc-blende	zinc-blende
density [g/$cm^{3}$]	5.32	2.33	5.32	3.81	6.15	3.23
lattice const. [ Å]	5.646	5.431	5.653	5.662	3.189	3.112
atom/molecule density	$4.4\times 10^{22}$	$5\times 10^{22}$	$4.4\times 10^{22}$	$4.59 \times 10^{22}$	$8.9 \times 10^{22}$	$9.58 \times 10^{22}$
[$cm^{-3}$]
dielectric const. $\epsilon_r$	16	11.8	13.1	10.9	8.9	8.5
energy gap Eg [eV]	0.67	1.12	1.43	2.16	3.39	6.2
breakdown field [$kV/cm^2$]	100	300	400	600	5000	1200
melting temperature [C]	937	1412	1240	1740	2500	3273
thermal capacity [J/kgK]	310	703	320	450	490	600
thermal conductivity	0.58	1.3	0.45	0.91	1.3	2.85
[W/cmK]